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PDF IRG4PH20K Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH20K | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD -91776
IRG4PH20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
6/25/98
1 page  
IRG4PH20K
800 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 11A
16
12
8
4
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.95
VCC = 960V
VGE = 15V
TJ = 25 ° C
0.90 IC = 11A
0.85
0.80
0.75
0.70
0
10 20 30 40
RGR,GG, aGtaeteRReessisisttaanncce (OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
RG = 50ΩOhm
VGE = 15V
VCC = 960V
1
IC = 10 A
IC = 5 A
IC = 2.5 A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH20K.PDF ] | |
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