DataSheet.jp

IRG4BC15MDPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRG4BC15MDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 10 pages
		

No Preview Available !

IRG4BC15MDPBF Datasheet, IRG4BC15MDPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD- 95612
IRG4BC15MDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
Rugged: 10µsec short circuit capable at VGS = 15V
C
Low VCE(on) for 4 to 10kHz applications
IGBT co-packaged with ultra-soft-recovery anti-parallel
Short Circuit Rated
Fast IGBT
VCES = 600V
diodes
Industry standard TO-220AB package
Lead-Free
Benefits
Best Value for Appliance and Industrial applications
Offers highest efficiency and short circuit capability for
G
E
n-channel
VCE(on) typ. = 1.88V
@VGE = 15V, IC = 8.6A
intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance and Industrial applications up to
1HP
High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
For Low EMI designs - requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Drive IC's
Allows simpler gate drive
Absolute Maximum Ratings
TO-220AB
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
14
8.6
28
28
4.0
12
16
± 20
49
19
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
µs
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
10 lbf•in (1.1 N•m)
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.7
7.0
–––
80
–––
Units
°C/W
g (oz)
1
8/2/04

1 Page





ページ 合計 : 10 ページ
PDF
ダウンロード
[ IRG4BC15MDPBF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRG4BC15MDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap