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PDF IRF7338PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7338PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
S1
G1
S2
G2
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
PD - 95197
IRF7338PbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
D1
D1
VDSS 12V
D2
-12V
D2
RDS(on) 0.034Ω 0.150Ω
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
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Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
N-Channel
P-Channel
12 -12
6.3 -3.0
5.2 -2.5
26 -13
2.0
1.3
16
±12
± 8.0
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
9/30/04
1 page  
N-Channel
IRF7338PbF
1000
800
600
400
Ciss
Coss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
200 Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 6.0A
10
VDS= 12V
8
6
4
2
0
0.0
2.0 4.0 6.0 8.0 10.0
QG Total Gate Charge (nC)
12.0
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+TA
0.1 1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
5 Page 
IRF7338PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
DB
A5
6
E
8765
1234
H
0.25 [.010]
A
6X e
e1
A
C
y
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING TO
A S UBS T RAT E.
DIM
INCHES
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BAS IC
e 1 .025 BAS IC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
8°
MILLIMET ERS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BAS IC
0.635 BASIC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOS FET)
INTERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY SIT E CODE
LOT CODE
PART NUMBER
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11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF7338PBF.PDF ] | |
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