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IRF7331PbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7331PbF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7331PbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
20V
PD - 95266
IRF7331PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
30@VGS = 4.5V
45@VGS = 2.5V
ID
7.0A
5.6A
Description
These N-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
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Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
20
7.0
5.5
28
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
05/18/04
1 Page 1000
100
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
10
1.50V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF7331PbF
100
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
10
1.50V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 150° C
10
V DS = 15V
20µs PULSE WIDTH
1
1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = 7.0A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7331PbF
0.05
0.04
0.03
ID = 7.0A
0.02
0.01
2.0
4.0 6.0
VGS, Gate -to -Source Voltage (V)
8.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.12
0.10
0.08
0.06
0.04 VGS = 2.5V
0.02
0.00
0
VGS = 4.5V
5 10 15 20 25
ID , Drain Current (A)
30
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
IRF7331PbF | HEXFET Power MOSFET | International Rectifier |
IRF7331PbF-1 | HEXFET Power MOSFET | International Rectifier |