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IRF7331PbF の電気的特性と機能

IRF7331PbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7331PbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7331PbF Datasheet, IRF7331PbF PDF,ピン配置, 機能
www.DataSheet4U.com
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
20V
PD - 95266
IRF7331PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
30@VGS = 4.5V
45@VGS = 2.5V
ID
7.0A
5.6A
Description
These N-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
20
7.0
5.5
28
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
05/18/04

1 Page





IRF7331PbF pdf, ピン配列
1000
100
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
10
1.50V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF7331PbF
100
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
10
1.50V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 150° C
10
V DS = 15V
20µs PULSE WIDTH
1
1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 7.0A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7331PbF 電子部品, 半導体
IRF7331PbF
0.05
0.04
0.03
ID = 7.0A
0.02
0.01
2.0
4.0 6.0
VGS, Gate -to -Source Voltage (V)
8.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.12
0.10
0.08
0.06
0.04 VGS = 2.5V
0.02
0.00
0
VGS = 4.5V
5 10 15 20 25
ID , Drain Current (A)
30
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF7331PbF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7331PbF-1

HEXFET Power MOSFET

International Rectifier
International Rectifier


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