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Datasheet 1N4003G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N4003G | Glass Passivated Rectifiers CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accor |  Taiwan Semiconductor | rectifier |
| 2 | 1N4003G | GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4001G THRU 1N4007G
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * High reliability Low cost Low leakage Low forward voltage drop High current capability Glass passivated junction
DO |  Rectron Semiconductor | rectifier |
| 3 | 1N4003G | Rectifier (Rugged glass package / using a high temperature alloyed construction) DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N4001G to 1N4007G Rectifiers
Product specification Supersedes data of April 1992 1996 May 24
Philips Semiconductors
Product specification
Rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low le |  NXP Semiconductors | rectifier |
| 4 | 1N4003G | GLASS PASSIVATED JUNCTION RECTIFIER SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N4001G THRU 1N4007G
GLASS PASSIVATED JUNCTION RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Molded case feature for auto insertion • Glass passivated chip • High current capability • Low leakage current • High surge capability • High temp |  Shanghai Sunrise Electronics | rectifier |
| 5 | 1N4003G | GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER CE
CHENYI ELECTRONICS
1N4001G THRU 1N4007G
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0Amperes
FEATURES
. The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 . High current capability . Low reverse leakage . G |  Shanghai Lunsure Electronic | rectifier |
1N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N40 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N40 | N-CHANNEL POWER MOSFET 1N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta  Unisonic Technologies mosfet | | |
| 3 | 1N4000 | 10 WATT ZENER DIODES 1N2970 thru 1N3015B and 1N3993 thru 1N4000A
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v  Microsemi Corporation diode | | |
| 4 | 1N4000 | Zener Diode, Rectifier S O LID
STAT E
INC.
1N3993 – 1N4000
Your TOTAL solutions source!
10 WATTS ZENER DIODES
DO4
ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "  SOLID STATE diode | | |
| 5 | 1N4000 | 10W Zener Diodes http://www.Datasheet4U.com
 Motorola Semiconductors diode | | |
| 6 | 1N4000 | Diode Zener Single 7.5V 20% 10W 2-Pin DO-4 New Jersey Semiconductor diode | | |
| 7 | 1N4000-1 | Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 New Jersey Semiconductor diode | |
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