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IRFU4105ZPBF の電気的特性と機能

IRFU4105ZPBFのメーカーはInternational Rectifierです、この部品の機能は「AUTOMOTIVE MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU4105ZPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU4105ZPBF Datasheet, IRFU4105ZPBF PDF,ピン配置, 機能
www.DataSheet4U.com
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
PD - 95374A
IRFR4105ZPbF
IRFU4105ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 24.5m
ID = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR4105Z
I-Pak
IRFU4105Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
3.12
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
12/06/04

1 Page





IRFU4105ZPBF pdf, ピン配列
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
00.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 100
VDS, Drain-to-Source Voltage (V)
11000
Fig 1. Typical Output Characteristics
IRFR/U4105ZPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
00.1
4.5V
60µs PULSE WIDTH
Tj = 175°C
1 100
VDS, Drain-to-Source Voltage (V)
11000
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0
4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
30
TJ = 175°C
25
20
15 TJ = 25°C
10
5 VDS = 8.0V
380µs PULSE WIDTH
0
0 10 20 30 40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRFU4105ZPBF 電子部品, 半導体
IRFR/U4105ZPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
120
ID
TOP 2.0A
100 3.5A
BOTTOM 18A
80
60
40
20
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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部品番号部品説明メーカ
IRFU4105ZPBF

AUTOMOTIVE MOSFET

International Rectifier
International Rectifier
IRFU4105ZPBF

AUTOMOTIVE MOSFET

International Rectifier
International Rectifier


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