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IRF7379PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7379PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7379PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
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PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1 VDSS 30V -30V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.045Ω 0.090Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
VSD
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
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Parameter
Maximum Junction-to-Ambient
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20
5.0 -5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Max.
50
Units
°C/W
1
10/7/04
1 Page N-Channel
IRF7379PbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10 10
4.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
100
10
TJ = 150°C TJ = 25°C
1
VDS = 15V
10
4
5
6
20µs PULSE WIDTH
7 8 9 10 A
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.1
0.0
VGS = 0V A
0.5 1.0 1.5 2.0 2.5
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
3Pages IRF7379PbF
100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
P-Channel
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
100
10
TJ = 150°C
TJ = 25°C
1
VDS = -15V
20µs PULSE WIDTH
1
4
5
6
7
8
9 10 A
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
6
0.1
0.0
VGS = 0V A
0.3 0.6 0.9 1.2 1.5
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF7379PBF | Power MOSFET ( Transistor ) | International Rectifier |