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PDF HMBT9014 Data sheet ( Hoja de datos )
| Número de pieza | HMBT9014 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200212
Issued Date : 2002.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
Features
• High Total Power Dissipation (PD: 225mW)
• Complementary to HMBT9015
• High hFE and Good Linearity
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C)
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VCBO
Collector
to
Base
Voltage
...........................................................................................................................
50 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 45 V
VEBO Emitter to Base Voltage ................................................................................................................................ 5 V
IC Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Cob
fT
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Classification on hFE
Rank (Marking Code)
Range
B (C4B)
100-300
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
C (C4C)
200-600
D (C4D)
400-1000
HMBT9014
HSMC Product Specification
1 page  
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : HN200212
Issued Date : 2002.07.01
Revised Date : 2004.09.08
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HMBT9014
HSMC Product Specification
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HMBT9014.PDF ] | |
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