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IRF2903ZSPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2903ZSPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2903ZSPBF Datasheet, IRF2903ZSPBF PDF,ピン配置, 機能
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PD - 96098
AUTOMOTIVE MOSFET
IRF2903ZSPbF
IRF2903ZLPbF
Features
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D VDSS = 30V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 2.4m
l Lead-Free
S ID = 75A
Description
Specifically designed for Automotive applications, D D
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
S
GD
D2Pak
S
D
G
TO-262
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
jRθJA Junction-to-Ambient
ijRθJA Junction-to-Ambient (PCB Mount, steady state)
www.irf.com
Max.
235
166
75
1020
231
1.54
± 20
231
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
0.65
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
1
04/06/07

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