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PDF IRF2903ZSPBF Data sheet ( 特性 )

部品番号 IRF2903ZSPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

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IRF2903ZSPBF Datasheet, IRF2903ZSPBF PDF,ピン配置, 機能
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PD - 96098
AUTOMOTIVE MOSFET
IRF2903ZSPbF
IRF2903ZLPbF
Features
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D VDSS = 30V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 2.4m
l Lead-Free
S ID = 75A
Description
Specifically designed for Automotive applications, D D
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
S
GD
D2Pak
S
D
G
TO-262
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
jRθJA Junction-to-Ambient
ijRθJA Junction-to-Ambient (PCB Mount, steady state)
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Max.
235
166
75
1020
231
1.54
± 20
231
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
0.65
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
1
04/06/07

1 Page





IRF2903ZSPBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
IRF2903ZS/ZLPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000.0
100.0 TJ = 175°C
10.0
1.0 TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
0.1
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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240
TJ = 25°C
200
160 TJ = 175°C
120
80
40
0
0
VDS = 10V
380µs PULSE WIDTH
20 40 60 80 100 120 140 160 180
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRF2903ZSPBF 電子部品, 半導体
IRF2903ZS/ZLPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
600
ID
500
TOP
26A
42A
BOTTOM 75A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5
ID = 1.0A
4.0 ID = 1.0mA
ID = 250µA
3.5 ID = 150µA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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