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PDF IS23SC1604 Data sheet ( Hoja de datos )
| Número de pieza | IS23SC1604 | |
| Descripción | 16-KBIT SECURED SERIAL EEPROM | |
| Fabricantes | ISSI | |
| Logotipo |  |
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IS23SC1604
16-KBIT SECURED SERIAL EEPROM
ISSI®
ADVANCE INFORMATION
APRIL 2003
FEATURES
• 16K serial EEPROM with security features
• Comply with ISO/IEC Standard 7816-3
Synchronous Protocol
• Store and validate security codes
• Four protected application zones
• Provide transport code security
• Single 5V power supply for read/write/erase
operations
• Low power operation:
— 15 µA (max.) standby current
— 3 mA (max.) read current at 300 KHz
— 4 mA (max.) write/erase current
• 2 ms read access time at 300 KHz;
5 ms write cycle time
• 300 KHz serial clock rate
www.DataSheet4U.com
• High ESD protection: > 4 KV
• High reliability:
— 1,000,000 erase/write cycles
— 10 years data retention
• Standard CMOS Process
• Wide operating temperature range
— 0°C to +70°C Commercial; –40°C to +85°C
Industrial
• Data access only after validation of security
code
• Permanent invalidation of device upon eight
consecutive failed attempts to enter the correct
security code
• Separate read/write/erase access protections
for each application zone
• Allow the memory chip to be personalized if the
internal security fuse is not blown. If the internal
security fuse is blown, maximum security protection
of the memory will always be enabled.
DESCRIPTION
IS23SC1604 is a low-cost, low-power, highly secured
16K bits (2K x 8) serial EEPROM. It is fabricated using
ISSI’s advanced CMOS technology.
The security features of IS23SC1604 provide high levels
of memory security protection for smart card applications.
The memory is partitioned into four application zones.
Each individual application zone is protected by multiple
security codes from unauthorized read/write/erase
access to the zone. In addition, an internal security fuse
is available for the card issuer to fully personalize the
device before releasing it to customer.
The device also features an internal high-voltage charge
pump for memory programming, 1,000,000 write/erase
cycles and ten years of data retention.
Pin Configuration: 8-pin Plastic DIP
Vcc
RST
CLK
FUS
C1
C2
C3
C4
C5 GND
C6 NC
C7 I/O
C8 PGM
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00E
04/10/03
1
1 page  
IS23SC1604
Device Operations (1)
Operation
Reset
FUS PGM RST CLK
XX
0
INC/Read
X0
0
INC/CMP
X0
0
Erase/Write X 1
0
Verify
Standby
X0
0
00 1 X
Note:
1. X = Don’t Care.
ISSI®
Description
The address counter is reset to zero and the
first bit of the memory is output after the falling
edge of RST.
The address counter is incremented and the first
bit is output after the falling edge of the clock if
read access to the bit location is enabled.
Compare the input bit with the internal bit of the
memory (for Security/Erase Key codes validation).
The address counter is incremented on the falling
edge of CLK. The input bit is latched into the device
at the rising edge of CLK and the bit comparison
is done on the next falling edge of CLK.
For write operation (write a ‘0’ to the current
address), a ‘0’ is placed on I/O before the rising
edge of CLK. For erase byte operation (write FFH
to the byte that contains the current bit), a ‘1’ is
placed on I/O before the rising edge of CLK. CLK
must stay HIGH for 5 ms during memory programming.
The new content of the current address will be
output after the falling edge of CLK for verification.
The device is placed into standby mode. In this
mode, the address counter will not be incremented
with clock pulse when RST is HIGH.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00E
04/10/03
5
5 Page 
IS23SC1604
ISSI®
IS23SC1604 MEMORY PARTITIONS
Fabrication Zone (FZ)
This zone is programmed by the manufacturer. After the
zone is programmed, the manufacturer disables the write/
erase access to this zone so that it cannot be changed by
card issuer or card user.
Issuer Zone (IZ)
This zone can only be programmed by the issuer during
device personalization process.
Security Code (SC)
This code serves as master security password to access
to device’s memory. A special transport code is pro-
grammed into SC location by the manufacturer and it is
only made known to the issuer.This special code secures
the transport of the device between the manufacturer and
the issuer. After the issuer successfully validates the trans-
port code, SC can be freely altered as wished. After the
internal security fuse is blown, SC protects the access to
the four application zones of the device.
Security Code Attempts Counter (SCAC)
Counts number of failed attempts to input the correct Se-
curity Code (SC) to the device. After eight consecutive
failed attempts, the device will be locked permanently.
Code Protected Zone (CPZ)
This zone is read access only. Access to erase or write to
this zone is protected by Security Code (SC).
Application Zone Security Codes (SC1, SC2, SC3, SC4)
These codes protect access to individual application zones
of the memory.
Application Zone Security Code Attempts
Counter (S1AC)
Counts number of failed attempts to input the correct Ap-
plication Zone 1 Security Code to the device. After eight
consecutive failed attempts, the Application Zone 1 will
be locked permanently.
Application Zone Erase Keys (EZ1, EZ2, EZ3, EZ4)
These keys protect individual application zones (AZ1, AZ2,
AZ3, AZ4) from unauthorized attempt to erase the zone.
Application Zone Erase Keys Attempts
Counter (E1AC, E2AC, E3AC, E4AC)
Counts number of failed attempts to input the correct ap-
plication zone erase key to the device. After eight con-
secutive failed attempts, the erasure of the correspond-
ing application zone will never be allowed (refer to Memory
Access Table).
Application Zones (AZ1, AZ2, AZ3, AZ4)
Each application zone provides protected data storage
space for user application. The read, write and erase ac-
cess to the application zone are controlled by the first two
bits of the zone as well as the corresponding application
zone security code and application zone erase key and
the Security Code (refer to Memory Access Table).
Memory Test Zone (MTZ)
There are no protections on this zone.
IS23SC1604 SECURITY LEVELS
There are two security levels available in IS23SC1604
which are controlled by the internal security fuse state
and FUS pin. At security level 1, the issuer has access to
the entire memory with successful Security Code (SC)
validation and the issuer is allowed to personalize the
content of the entire memory except the Fabrication Zone
(FZ). At security level 2, the memory is fully protected by
various security codes in the memory. When the card has
been personalized, the internal security fuse should be
blown to protect the card memory from unauthorized us-
age before the card is released to the customer (Refer to
Blowing Internal Security Fuse ). Once the security fuse
is blown, it cannot be changed again. Below is the truth
table that shows how the security level can be set with
the state of FUS input pin.
Security Levels
FUS pin
GND
Vcc
Vcc
State of the Internal FUSE
Don’t Care
HIGH (FUSE not blown)
LOW (FUSE blown)
Security Level
2
1
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00E
04/10/03
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IS23SC1604.PDF ] | |
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