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0912-25 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 0912-25
部品説明 Pulsed Avionics
メーカ GHz Technology
ロゴ GHz Technology ロゴ 



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0912-25 Datasheet, 0912-25 PDF,ピン配置, 機能
0912-25
25 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The 0912-25 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
125 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
60 Volts
4.0 Volts
2.5 Amps
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55CX, STYLE 1
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1 %
F = 1090 MHz
MIN
25
8.5
TYP
10
45
MAX UNITS
Watts
3.5 Watts
dB
%
10:1
BVebo
BVces
Cob
hFE
θjc2
Emitter to Base Breakdown
Ie = 25 mA
4.0
Volts
Collector to Emitter Breakdown Ic = 75 mA
55
Volts
Capacitance Collector to Base Vcb = 50 Volts
14 17
pF
DC - Current Gain
Ic =300 mA, Vce =5 V 10
Thermal Resistance
1.4 oC/W
Note 1: At rated output power and pulse conditions.
2: At rated pulse conditions
Initial Issue June 1, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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