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Datasheet SS8050LT1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SS8050LT1 | NPN Epitaxial Silicon Transistor SS8050LT1 NPN Epitaxial Silicon Transistor
1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
SOT-23
Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collecto | Elite | transistor |
2 | SS8050LT1 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
SS8050LT1
FEATURES
TRANSISTOR£¨NPN £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Op | Jiangsu Changjiang Electronics | transistor |
3 | SS8050LT1 | NPN General Purpose Transistors SS8050LT1
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value 25 40 6.0 1500
625 5.0 200
SS8050LT1=Y1
0.1 100 100
25 40 6.0
)
E=20 Vdc, I E= 0 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
SS8050LT1
ELECTRICAL CHARACTERISTICS (TA | Weitron Technology | transistor |
SS8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SS8050 | Plastic-Encapsulate Transistors DATA SHEET
SEMICONDUCTOR
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation PCM : 1 W :2W
(TA=25℃) (TC=25℃)
SS8050
TRANSISTOR (NPN) TO-92
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
C YS transistor | | |
2 | SS8050 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
SS8050
DESCRIPTION ·Low Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC =0.8A
APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO INCHANGE transistor | | |
3 | SS8050 | TRANSISTOR SS8050
TRANSISTOR (NPN)
! "
(() )* !'
(()+$ ,(- . /0 . #$%& Wing Shing Computer transistor | | |
4 | SS8050 | NPN General Purpose Transistors NPN General Purpose Transistors
P b Lead(Pb)-Free
SS8050
TO-92
1. EMITTER
2. BASE 3. COLLECTOR
123
MAXIMUM RATINGS(TA=25˚C unless otherwise noted)
Rating Collector-Base Voltage
Symbol VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current-Continuous
IC
Total De Weitron Technology transistor | | |
5 | SS8050 | NPN Epitaxial Silicon Transistor SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050 NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A
1 TO-92 1. Emitter 2. Base 3. Collector
Ordering Inf Fairchild Semiconductor transistor | | |
6 | SS8050 | Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(IC= 1.5A) z Complementary To SS8550.
Pb
Lead-free
z Collector dissipation:PC=300mW(TC=25℃)
APPLICATIONS
z High Collector Current.
Production specification
SS8050
ORDERING INFORMATION
Type No.
Marking
SS8050
Y1
SOT-23
Pa Galaxy Microelectronics transistor | | |
7 | SS8050 | NPN Transistor SS8050 TRANSISTOR (NPN)
SOT-23
FEATURES Complimentary to SS8550
1. BASE 2. EMITTER 3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - KOO CHIN transistor | |
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