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APT8M100B の電気的特性と機能

APT8M100BのメーカーはMicrosemi Corporationです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 APT8M100B
部品説明 N-Channel MOSFET
メーカ Microsemi Corporation
ロゴ Microsemi Corporation ロゴ 




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APT8M100B Datasheet, APT8M100B PDF,ピン配置, 機能
APT8M100B
APT8M100S
1000V, 8A, 1.80Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
TO-247
D3PAK
APT8M100B
APT8M100S
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
8
5
27
±30
415
4
Unit
A
V
mJ
A
Min Typ Max Unit
290 W
0.43
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m

1 Page





APT8M100B pdf, ピン配列
20
18 VGS = 10V
16
TJ = -55°C
14
12
10
8 TJ = 25°C
6
4
2 TJ = 125°C
00
5
TJ = 150°C
10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 4A
2.5
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
10
8 TJ = -55°C
TJ = 25°C
6
TJ = 125°C
4
2
00 1 2 3 4
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 4A
14
5
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
00 10 20 30 40 50 60 70 80
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
8
TJ = 125°C
7
6
APT8M100B_S
VGS= 6, 7, 8 & 9V
5
4
3 5V
2
1 4.5V
0 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
30
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
25 @ <0.5 % DUTY CYCLE
20
15
TJ = -55°C
10 TJ = 25°C
TJ = 125°C
5
00
3,000
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
1,000
Ciss
100
Coss
10
Crss
1 0 200 400 600 800 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
30
25
20
TJ = 25°C
15
TJ = 150°C
10
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage


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共有リンク

Link :


部品番号部品説明メーカ
APT8M100B

N-Channel MOSFET

Microsemi Corporation
Microsemi Corporation
APT8M100S

N-Channel MOSFET

Microsemi Corporation
Microsemi Corporation


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