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IRLMS6802PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLMS6802PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLMS6802PBF Datasheet, IRLMS6802PBF PDF,ピン配置, 機能
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
D
D
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD- 94897
IRLMS6802PbF
HEXFET® Power MOSFET
1
6
A
D
VDSS = -20V
2 5D
3 4S
Top View
RDS(on) = 0.050
Micro6ä
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
1/18/05

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