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PDF IRGIH50F Data sheet ( Hoja de datos )
| Número de pieza | IRGIH50F | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -90930B
IRGIH50F
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses
C
G
E
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
VCES = 1200V
VCE(on) max =2.9V
@VGE = 15V, IC = 25A
TO-259AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
1200
45
25
180
90
±20
200
80
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 0.625
— 0.21 —
— — 30
°C/W
Test Conditions
For footnotes refer to the last page
www.irf.com
1
02/18/02
1 page  
IRGIH50F
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRGIH50F.PDF ] | |
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