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PDF IRGI4065PBF Data sheet ( Hoja de datos )
| Número de pieza | IRGI4065PBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97187
IRGI4065PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 28A
IRP max @ TC= 25°C
TJ max
300
1.25
170
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
www.DataSheet4U.com efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case d
Max.
±30
28
14
170
39
16
0.31
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
3.20
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
02/17/06
1 page  
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
IRGI4065PbF
25
IC = 25A
20
VCE = 240V
15
VCE = 200V
VCE = 150V
10
100
Coes
Cres
10
0
50 100 150 200 250
VCE, Collector-toEmitter-Voltage(V)
300
5
0
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.533 0.000938
τ3τ3 1.163 0.140118
1.504 2.477
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRGI4065PBF.PDF ] | |
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