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What is IRFR1010ZPBF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "AUTOMOTIVE MOSFET".


IRFR1010ZPBF Datasheet PDF - International Rectifier

Part Number IRFR1010ZPBF
Description AUTOMOTIVE MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD - 95951
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJunction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR1010ZPbF
IRFU1010ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 7.5m
S ID = 42A
D-Pak
IRFR1010Z
I-Pak
IRFU1010Z
Max.
91
65
42
360
140
0.9
± 20
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.11
40
110
Units
°C/W
1
12/20/04

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IRFR1010ZPBF equivalent
100
LIMITED BY PACKAGE
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
IRFR/U1010ZPbF
2.5
ID = 42A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτiRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.3854 0.000251
τ3τ3 0.3138 0.001092
0.4102 0.015307
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
IRFR1010ZPBFThe function is AUTOMOTIVE MOSFET. International RectifierInternational Rectifier

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