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PDF IRFIB5N50LPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFIB5N50LPBF | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95390
IRFIB5N50LPbF
Applications
SMPS MOSFET HEXFET® Power MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
VDSS RDS(on) typ. Trr typ. ID
500V 0.67Ω
73ns 4.7A
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
TO-220 Full-Pak
immunity.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
4.7
3.0
16
42
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.33
±30
13
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 4.7
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
www.irf.com
––– ––– 16
A showing the
integral reverse
G
––– ––– 1.5
p-n junction diode.
S
fV TJ = 25°C, IS = 4.0A, VGS = 0V
––– 73 110 ns TJ = 25°C, IF = 4.0A
––– 99 150
fTJ = 125°C, di/dt = 100A/µs
f––– 200 310 nC TJ = 25°C, IS = 4.0A, VGS = 0V
––– 360 540
fTJ = 125°C, di/dt = 100A/µs
––– 6.7 10 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
06/10/04
1 page  
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
1msec
10msec
100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
IRFIB5N50LPbF
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100
TC , Case Temperature ( °C)
125
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFIB5N50LPBF.PDF ] | |
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