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IRFIB5N50L の電気的特性と機能

IRFIB5N50LのメーカーはInternational Rectifierです、この部品の機能は「MOTOR Control Application」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFIB5N50L
部品説明 MOTOR Control Application
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFIB5N50L Datasheet, IRFIB5N50L PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 94522B
SMPS MOSFET IRFIB5N50L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.67
73ns 4.7A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
immunity.
Absolute Maximum Ratings
TO-220 Full-Pak
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
4.7
3.0
16
42
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.33
±30
19
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 4.7
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 16
––– ––– 1.5
A showing the
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 4.0A, VGS = 0V
trr Reverse Recovery Time
––– 73 110 ns TJ = 25°C, IF = 4.0A
––– 99 150
fTJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 200 310 nC TJ = 25°C, IS = 4.0A, VGS = 0V
––– 360 540
fTJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 6.7 10 A TJ = 25°C
ton Forward Turn-On Time
www.irf.com
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
08/19/04

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IRFIB5N50L pdf, ピン配列
IRFIB5N50L
100
TOP
VGS
15V
12V
10
10V
8.0V
7.0V
6.5V
6.0V
1 BOTTOM 5.5V
0.1
5.5V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
TOP
VGS
15V
12V
10V
8.0V
10 7.0V
6.5V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150 ° C
10
1 TJ= 25 ° C
0.1
0.01
5.0
V DS= 50V
20µs PULSE WIDTH
6.0 7.0
V GS, Gate-to-Source Voltage (V)
8.0
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 4.0A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature (°C° )
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFIB5N50L 電子部品, 半導体
IRFIB5N50L
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1 1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
6.0
5.0
ID = 250µA
4.0
3.0
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs.Temperature
6 www.irf.com

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共有リンク

Link :


部品番号部品説明メーカ
IRFIB5N50L

MOTOR Control Application

International Rectifier
International Rectifier
IRFIB5N50LPBF

SMPS MOSFET

International Rectifier
International Rectifier


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