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IRFIB5N50LのメーカーはInternational Rectifierです、この部品の機能は「MOTOR Control Application」です。 |
部品番号 | IRFIB5N50L |
| |
部品説明 | MOTOR Control Application | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFIB5N50Lダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
PD - 94522B
SMPS MOSFET IRFIB5N50L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.67Ω
73ns 4.7A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
Absolute Maximum Ratings
TO-220 Full-Pak
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
4.7
3.0
16
42
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.33
±30
19
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 4.7
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
––– ––– 16
––– ––– 1.5
A showing the
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 4.0A, VGS = 0V
trr Reverse Recovery Time
––– 73 110 ns TJ = 25°C, IF = 4.0A
––– 99 150
fTJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 200 310 nC TJ = 25°C, IS = 4.0A, VGS = 0V
––– 360 540
fTJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 6.7 10 A TJ = 25°C
ton Forward Turn-On Time
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Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
08/19/04
1 Page IRFIB5N50L
100
TOP
VGS
15V
12V
10
10V
8.0V
7.0V
6.5V
6.0V
1 BOTTOM 5.5V
0.1
5.5V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
TOP
VGS
15V
12V
10V
8.0V
10 7.0V
6.5V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150 ° C
10
1 TJ= 25 ° C
0.1
0.01
5.0
V DS= 50V
20µs PULSE WIDTH
6.0 7.0
V GS, Gate-to-Source Voltage (V)
8.0
9.0
Fig 3. Typical Transfer Characteristics
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3.0
ID = 4.0A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature (°C° )
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages IRFIB5N50L
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1 1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
6.0
5.0
ID = 250µA
4.0
3.0
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs.Temperature
6 www.irf.com
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部品番号 | 部品説明 | メーカ |
IRFIB5N50L | MOTOR Control Application | International Rectifier |
IRFIB5N50LPBF | SMPS MOSFET | International Rectifier |