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IRFB16N60LPBFのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。 |
部品番号 | IRFB16N60LPBF |
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部品説明 | SMPS MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB16N60LPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
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SMPS MOSFET
PD - 95471
IRFB16N60LPbF
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385mΩ 130ns 16A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
16
10
60
310
Units
A
W
VGS
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dPeak Diode Recovery dv/dt
2.5 W/°C
±30 V
10 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 16
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 60
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 16A, VGS = 0V
S
ftrr Reverse Recovery Time
––– 130 200 ns TJ = 25°C, IF = 16A
––– 240 360
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 450 670 nC TJ = 25°C, IS = 16A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.8 8.7 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
7/7/04
1 Page IRFB16N60LPbF
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
TOP
VGS
15V
12V
10V
9.0V
10 8.0V
7.0V
6.0V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
1
0.1
0.01
4
TJ = 25°C
VDS = 50V
20µs PULSE WIDTH
6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 3. Typical Transfer Characteristics
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3.0
ID = 15A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages IRFB16N60LPbF
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+T C
t2
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
5.0
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
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部品番号 | 部品説明 | メーカ |
IRFB16N60LPBF | SMPS MOSFET | International Rectifier |