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PDF AO4840 Data sheet ( Hoja de datos )
| Número de pieza | AO4840 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4840 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON) < 31mΩ (VGS=10V)
RDS(ON) < 45mΩ (VGS=4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2
G2
S2
G1
www.DataSheet4U.com
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Max
40
±20
6
5
20
2
1.28
-55 to 150
D1
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4840.PDF ] | |
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