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IRLR8503 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR8503
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR8503 Datasheet, IRLR8503 PDF,ピン配置, 機能
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IRLPRD8-93580393A
IRLR8503
• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current
applications
HEXFET® MOSFET for DC-DC Converters
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
G
S D-Pak
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including RDS(on), gate charge and Cdv/dt-
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q & R for reduced
sw DS(on)
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
DEVICE RATINGS (MAX. Values)
V
DS
RDS(on)
QG
Qsw
Q
oss
IRLR8503
30V
18 m
20 nC
8 nC
29.5 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 10V)U
Pulsed Drain CurrentQ
TC = 25°C
TC = 90°C
Power DissipationU
TC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current Q
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
I
S
I
SM
Symbol
RθJA
RθJL
IRLR8503
30
±20
44
32
196
62
30
–55 to 150
15
196
Max.
50
2.0
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
12/21/00

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