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IRLR7811WCPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLR7811WCPBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLR7811WCPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
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SMPS MOSFET
PD - 96064
IRLR7811WCPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
10.5mΩ
Qg
19nC
D-Pak
IRLR7811WCPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 100°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
64
45
260
71
1.5
0.48
± 12
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes through are on page 9
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Typ.
–––
–––
–––
Max.
2.1
50
110
Units
°C/W
1
05/24/06
1 Page IRLR7811WCPbF
10000
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
10
1
2.5V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
1.00
2.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
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2.0
ID = 64A
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRLR7811WCPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
2.5
2.0
1.5
ID = 250µA
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
6
400
ID
TOP
4.9A
8.5A
320
BOTTOM
12A
240
160
80
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( °C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14. Gate Charge Test Circuit
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLR7811WCPBF | HEXFET Power MOSFET | International Rectifier |