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IRLU3915PBF の電気的特性と機能

IRLU3915PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLU3915PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLU3915PBF Datasheet, IRLU3915PBF PDF,ピン配置, 機能
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AUTOMOTIVE MOSFET
PD - 95090A
IRLR3915PbF
IRLU3915PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 14m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S ID = 30A
D-Pak
I-Pak
IRLR3915PbF IRLU3915PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
± 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Junction-to-Ambient–––
Typ.
–––
–––
110
Max.
1.3
50
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
12/7/04

1 Page





IRLU3915PBF pdf, ピン配列
IRLR/U3915PbF
10000
1000
100
10
1
0.1
0.01
0.001
0.1
TOP
BOTTOM
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
10
1
0.1
0.1
TOP
BOTTOM
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
2.0V
20µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 25°C
TJ = 175°C
10.00
1.00
0.10
1.0
VDS = 25V
20µs PULSE WIDTH
3.0 5.0 7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
www.irf.com
70
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 175°C
10 20 30 40 50
ID,Drain-to-Source Current (A)
60
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRLU3915PBF 電子部品, 半導体
IRLR/U3915PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP 12A
21A
400
BOTTOM
30A
300
200
100
0
25 50 75 100 125 150
Starting Tj, Junction Temperature ( ° C)
175
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
2.0
1.5
ID = 250µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

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部品番号部品説明メーカ
IRLU3915PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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