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IRLU3915PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLU3915PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLU3915PBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
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AUTOMOTIVE MOSFET
PD - 95090A
IRLR3915PbF
IRLU3915PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 14mΩ
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S ID = 30A
D-Pak
I-Pak
IRLR3915PbF IRLU3915PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
± 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient–––
Typ.
–––
–––
110
Max.
1.3
50
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
12/7/04
1 Page IRLR/U3915PbF
10000
1000
100
10
1
0.1
0.01
0.001
0.1
TOP
BOTTOM
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
10
1
0.1
0.1
TOP
BOTTOM
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
2.0V
20µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 25°C
TJ = 175°C
10.00
1.00
0.10
1.0
VDS = 25V
20µs PULSE WIDTH
3.0 5.0 7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
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70
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 175°C
10 20 30 40 50
ID,Drain-to-Source Current (A)
60
Fig 4. Typical Forward Transconductance
vs. Drain Current
3
3Pages IRLR/U3915PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP 12A
21A
400
BOTTOM
30A
300
200
100
0
25 50 75 100 125 150
Starting Tj, Junction Temperature ( ° C)
175
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
2.0
1.5
ID = 250µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRLU3915PBF | HEXFET Power MOSFET | International Rectifier |