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IRLR3915PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR3915PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR3915PBF Datasheet, IRLR3915PBF PDF,ピン配置, 機能
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AUTOMOTIVE MOSFET
PD - 95090A
IRLR3915PbF
IRLU3915PbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 14m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S ID = 30A
D-Pak
I-Pak
IRLR3915PbF IRLU3915PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
± 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Junction-to-Ambient–––
Typ.
–––
–––
110
Max.
1.3
50
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
12/7/04

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