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IRLR3105PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLR3105PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLR3105PBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
www.DataSheet4U.com
PD - 95553A
AUTOMOTIVE MOSFET
IRLR3105PbF
IRLU3105PbF
HEXFET® Power MOSFET
Features
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
VDSS = 55V
RDS(on) = 0.037Ω
ID = 25A
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRLU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
D-Pak
IRLR3105
I-Pak
IRLU3105
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
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Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig.12a, 12b, 15, 16
3.4
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04
1 Page IRLR/U3105PbF
1000
100
10
VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
1
0.1
0.01
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100 VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
10
2.25V
BOTTOM 2.0V
1 2.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 25°C
TJ = 175°C
1.00
0.10
0.01
2.0
VDS = 25V
20µs PULSE WIDTH
4.0 6.0
VGS , Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
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30
TJ = 175°C
25
20
TJ = 25°C
15
10
5 VDS = 25V
20µs PULSE WIDTH
0
0 10 20 30 40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
3Pages IRLR/U3105PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
100
ID
TOP 6.1A
11A
80
BOTTOM
15A
60
40
20
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
2.0
ID = 250µA
1.5
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRLR3105PBF | HEXFET Power MOSFET | International Rectifier |