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IRLR3105PBF の電気的特性と機能

IRLR3105PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLR3105PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLR3105PBF Datasheet, IRLR3105PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95553A
AUTOMOTIVE MOSFET
IRLR3105PbF
IRLU3105PbF
HEXFET® Power MOSFET
Features
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
VDSS = 55V
RDS(on) = 0.037
ID = 25A
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRLU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
D-Pak
IRLR3105
I-Pak
IRLU3105
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig.12a, 12b, 15, 16
3.4
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04

1 Page





IRLR3105PBF pdf, ピン配列
IRLR/U3105PbF
1000
100
10
VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
1
0.1
0.01
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100 VGS
TOP 15V
10V
5.0V
3.0V
2.7V
2.5V
10
2.25V
BOTTOM 2.0V
1 2.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 25°C
TJ = 175°C
1.00
0.10
0.01
2.0
VDS = 25V
20µs PULSE WIDTH
4.0 6.0
VGS , Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
30
TJ = 175°C
25
20
TJ = 25°C
15
10
5 VDS = 25V
20µs PULSE WIDTH
0
0 10 20 30 40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRLR3105PBF 電子部品, 半導体
IRLR/U3105PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
100
ID
TOP 6.1A
11A
80
BOTTOM
15A
60
40
20
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
2.0
ID = 250µA
1.5
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRLR3105PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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