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IRLR3105PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR3105PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR3105PBF Datasheet, IRLR3105PBF PDF,ピン配置, 機能
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PD - 95553A
AUTOMOTIVE MOSFET
IRLR3105PbF
IRLU3105PbF
HEXFET® Power MOSFET
Features
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
VDSS = 55V
RDS(on) = 0.037
ID = 25A
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRLU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
D-Pak
IRLR3105
I-Pak
IRLU3105
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig.12a, 12b, 15, 16
3.4
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04

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