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IRLI530AのメーカーはFairchild Semiconductorです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLI530A |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRLI530Aダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
IRLW/I530A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V
♦ Lower RDS(ON): 0. 101Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.12Ω
ID = 14 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
14
9.9
49
±20
261
14
6.2
6.5
3.8
62
0.41
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.41
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1
1 Page 1&+$11(/
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Fig 1. Output Characteristics
102
Top :
VGS
7.0V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
101 Bottom : 3.0V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
VGS = 5 V
0.15
0.10
0.05
0.00
0
VGS = 10 V
@ Note : TJ = 25 oC
15 30 45
ID , Drain Current [A]
60
Fig 5. Capacitance vs. Drain-Source Voltage
1000
800 C iss
Ciss= Cgs+ Cgd (Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
600
C oss
400
C rss
200
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRLW/I530A
Fig 2. Transfer Characteristics
101
175 oC
100
10-1
0
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
6
VDS = 20 V
VDS = 50 V
VDS = 80 V
4
2
@ Notes : ID = 14 A
0
0 3 6 9 12 15 18
QG , Total Gate Charge [nC]
3Pages IRLW/I530A
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLI530A | HEXFET Power MOSFET | Fairchild Semiconductor |
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