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PDF IRGBC30UD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGBC30UD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.796A
IRGBC30UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
VCES = 600V
VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 12A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
www.DataSheet4U.com
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-701
TO-220AB
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
—
—
—
—
—
Typ.
—
—
0.50
—
2 (0.07)
Max.
1.2
2.5
—
80
—
Units
°C/W
g (oz)
Revision 1
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IRGBC30UD2
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200 Cres = C gc
Coes = C ce + C gc
1000 Cies
800
Coes
600
400
Cres
200
0
1 10 100
V C E , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.7
VCC = 480V
VGE = 15V
TC = 25°C
I C = 12A
1.6
1.5
1.4
0
A
10 20 30 40 50 60
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 12A
16
12
8
4
0
0 5 10 15 20 25
Q g , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
10
IC = 24A
I C = 12A
1
IC = 6.0A
RG = 23Ω
VGE = 15V
VCC = 480V
0.1
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-705
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRGBC30UD2.PDF ] | |
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