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IRGBC30FD2 の電気的特性と機能

IRGBC30FD2のメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGBC30FD2
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGBC30FD2 Datasheet, IRGBC30FD2 PDF,ピン配置, 機能
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PD - 9.794
IRGBC30FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
E
n-channel
Fast CoPack IGBT
VCES = 600V
VCE(sat) 2.1V
@VGE = 15V, IC = 31A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
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Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-101
TO-220AB
Max.
600
31
17
120
120
12
120
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
Typ.
0.50
2 (0.07)
Max.
1.2
2.5
80
Units
°C/W
g (oz)
Revision 1
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1 Page





IRGBC30FD2 pdf, ピン配列
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IRGBC30FD2
20
16
12
60% of rated
volta ge
8
4
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Ga te drive as specified
Turn-on losses include
effects of reverse recovery
Power D issipation = 21W
A
100
1000
1000
TJ = 25 °C
100
TJ = 15 0°C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VC E , C ollector-to-E mitter V oltage (V )
Fig. 2 - Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
0.1
5
VCC = 100V
5µs PULSE WIDTH
10 15 20
VG E , G ate-to-E m itter Volta g e (V )
Fig. 3 - Typical Transfer Characteristics
C-103
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3Pages


IRGBC30FD2 電子部品, 半導体
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Index
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IRGBC30FD2
12
RG = 23
T C = 150°C
VCC = 480V
VGE = 15V
9
6
3
0A
0 10 20 30 40
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
VGGEE= 20 V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1 10 100 1000
VCE , C olle ctor-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
TJ = 150°C
10 TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-106
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部品番号部品説明メーカ
IRGBC30FD2

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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