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IRG4BC40SPBF の電気的特性と機能

IRG4BC40SPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4BC40SPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4BC40SPBF Datasheet, IRG4BC40SPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95175
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40SPbF
Standard Speed IGBT
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
60
31
120
120
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
0.77
–––
80
–––
Units
°C/W
g (oz)
1
04/23/04

1 Page





IRG4BC40SPBF pdf, ピン配列
IRG4BC40SPbF
70
60
50
40 S q u are wave:
60 % of rated
30 voltage
I
20
F or both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
Power D issipation = 28W
Trian gu lar w a ve :
I
C lam p voltage:
80 % o f ra ted
10 Ideal diodes
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
1000
1000
100
TJ = 25°C
10
TJ = 150°C
V GE = 15V
1 20µs PULSE WIDTH A
0.1 1 10
VC E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10
VG E, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4BC40SPBF 電子部品, 半導体
IRG4BC40SPbF
30 RG = 10
T J = 150°C
VCC = 480V
VGE = 15V
20
10
1000 VGGE E= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
0A
0 10 20 30 40 50 60 70
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRG4BC40SPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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