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PDF IRG4BC20K-SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC20K-SPBF | |
| Descripción | Short Circuit Rated UltraFast IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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95167
IRG4BC20K-SPbF
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Lead-Free
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGBC20K-S and
IRGBC20M-S devices
Absolute Maximum Ratings
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
D 2 Pak
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RqJC
RqCS
RqJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
www.irf.com
Max.
600
16
9.0
32
32
10
±20
29
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Typ.
0.5
1.44
Max.
2.1
40
Units
V
A
µs
V
mJ
W
°C
Units
°C/W
g
1
04/22/04
1 page  
800
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20K-SPbF
20 VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
IC = 9A.0A
0.4
0.3
10 RG = O50hWm
VGE = 15V
VCC = 480V
1
IC = 18A
IC = 9.09AA
IC = 4.5A
0.2
0
10 20 30 40
RGRG, G, GaateteRReessisisttaannccee (OWh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC20K-SPBF.PDF ] | |
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