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IRFZ48RS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48RS
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFZ48RS Datasheet, IRFZ48RS PDF,ピン配置, 機能
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l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Drop in Replacement of the IRFZ48
for Linear/Audio Applications
G
PD - 94074
IRFZ48RS
IRFZ48RL
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 0.018
ID = 50*A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D2Pak
IRFZ48RS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
50*
50*
290
190
1.3
± 20
100
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
TO-262
IRFZ44RL
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.8
–––
62
Units
°C/W
1
05/21/02

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