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IRFZ24VLPbF の電気的特性と機能

IRFZ24VLPbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFZ24VLPbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFZ24VLPbF Datasheet, IRFZ24VLPbF PDF,ピン配置, 機能
www.DataSheet4U.com
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
PD - 95524
IRFZ24VSPbF
IRFZ24VLPbF
HEXFET® Power MOSFET
D VDSS = 60V
RDS(on) = 60m
ID = 17A
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
D2Pak
IRFZ24VS
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
44
0.29
± 20
17
4.4
4.2
-55 to + 175
300 (1.6mm from case )
TO-262
IRFZ24VL
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
Typ.
–––
–––
Max.
3.4
40
Units
°C/W
1
7/16/04

1 Page





IRFZ24VLPbF pdf, ピン配列
IRFZ24VS/LPbF
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
1 TJ= 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
V DS= 25V
1 20µs PULSE WIDTH
4 6 8 10 12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 17A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ24VLPbF 電子部品, 半導体
IRFZ24VS/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
80 ID
TOP
6.9A
12A
BOTTOM 17A
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFZ24VLPbF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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