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IRFU1N60APBF の電気的特性と機能

IRFU1N60APBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU1N60APBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU1N60APBF Datasheet, IRFU1N60APBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95518A
SMPS MOSFET
IRFR1N60APbF
IRFU1N60APbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l Power Factor Correction
l Lead-Free
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
7.0
1.4A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
D-Pak
IRFR1N60A
I-Pak
IRFU1N60A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.4
0.89
5.6
36
0.28
± 30
3.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Low Power Single Transistor Flyback
Notes  through … are on page 9
www.irf.com
1
12/03/04

1 Page





IRFU1N60APBF pdf, ピン配列
IRFR/U1N60APbF
10 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1 4.5V
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20µs PULSE WIDTH
TJ= 150 °C
10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
0.1
4.0
V DS= 100V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 1.4A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFU1N60APBF 電子部品, 半導体
IRFR/U1N60APbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
200
ID
TOP
0.65A
0.9A
160 BOTTOM 1.4A
120
80
40
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
770
750
730
710
690
670
0.0
0.4 0.8 1.2
I av , Avalanche Current (A)
A
1.6
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com

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部品番号部品説明メーカ
IRFU1N60APBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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