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IRF7478PBFのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。 |
部品番号 | IRF7478PBF |
| |
部品説明 | SMPS MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7478PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
SMPS MOSFET
PD- 95280
IRF7478PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V
30@VGS = 4.5V
ID
4.2A
3.5A
Benefits
l Low Gate to Drain Charge to Reduce
S
Switching Losses
S
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See S
App. Note AN1001)
G
l Fully Characterized Avalanche Voltage
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/21/04
1 Page 100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7478PbF
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
2.5
VDS = 25V
20µs PULSE WIDTH
3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
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2.5 ID = 7.0A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7478PbF
0.028
0.026
0.024
0.022
VGS = 4.5V
0.020
0.018
0.016
0
VGS = 10V
10 20 30 40
ID , Drain Current (A)
50
60
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.04
0.03
0.02 ID = 7.0A
0.01
0.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
400 ID
TOP
1.9A
3.4A
BOTTOM 4.2A
300
200
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF7478PBF | SMPS MOSFET | International Rectifier |
IRF7478PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |