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PDF IRF7389PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7389PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95462
IRF7389PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 30V -30V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.029Ω 0.058Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30 -30
± 20
7.3 -5.3
5.9 -4.2
30 -30
2.5 -2.5
2.5
1.6
82 140
Avalanche Current
IAR 4.0
-2.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
3.8 -2.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
RθJA
Limit
50
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
1
6/29/04
1 page  
N-Channel
IRF7389PbF
1200
900
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
300 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.8A
16
VDS = 15V
12
8
4
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7389PBF.PDF ] | |
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