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IRLI620G の電気的特性と機能

IRLI620GのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLI620G
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLI620G Datasheet, IRLI620G PDF,ピン配置, 機能
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HEXFET® Power MOSFET
PD - 9.1235
IRLI620G
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
VDSS = 200V
RDS(on) = 0.80
ID = 4.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
4.0
2.6
16
30
0.24
±10
62
4.0
3.0
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
––––
Max.
4.1
65
Units
°C/W
To Order
Revision 0

1 Page





IRLI620G pdf, ピン配列
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IRLI620G
100 VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
10 2.50V
BOTTOM 2.25V
1
0.1 2.25V
0.01
0.01
20µs PULSE WIDTH
TC = 150°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TC = 25oC
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
2.0
VDS = 50V
20µs PULSE WIDTH
A
2.5 3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
10
1
0.1
0.1
2.25V
20µs PULSE WIDTH
TC = 150°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics,
TC = 150oC
2.5
ID = 5.2A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 5.0V A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order


3Pages


IRLI620G 電子部品, 半導体
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IRLI620G
5.0V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
150 ID
TOP
1.8A
2.5A
125 BOTTOM 4.0A
100
75
50
25
0 VDD = 50V
A
25 50 75 100 125 150
Starting TJ , Juntion Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
To Order

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共有リンク

Link :


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