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PZT3904のメーカーはNational Semiconductorです、この部品の機能は「NPN General Purpose Amplifier」です。 |
部品番号 | PZT3904 |
| |
部品説明 | NPN General Purpose Amplifier | ||
メーカ | National Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとPZT3904ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
N
Discrete Power & Signal
Technologies
www.DataSheet4U.com
2N3904
MMBT3904
C
BE
TO-92
MMPQ3904
EB
B
BE
E
B
E CC
C
CC
C
C
C
SOIC-16
C
SOT-23
Mark: 1A
E
B
PZT3904
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
1 Page NPN General Purpose Amplifier
(continued)
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3904
625
5.0
83.3
200
*PZ T3904
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
**MMBT3904
350
2.8
357
MMPQ3904
1,000
8.0
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
°C/W
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
25 °C
200
V CE = 5V
100 - 40º C
0
0.1 1
10 100
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
0.8 - 40 °C
0.6
25 °C
0.4
125 °C
0.1 1 10
I C - COLLECTOR CURRENT (mA)
P 23
100
Collector-Emitter Saturation
Voltage vs Collector Current
0.15 β = 10
0.1
125 °C
0.05
0.1
25 °C
- 40 °C
1 10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8 - 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
100
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ PZT3904 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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