DataSheet.jp

PZT3904 の電気的特性と機能

PZT3904のメーカーはNational Semiconductorです、この部品の機能は「NPN General Purpose Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 PZT3904
部品説明 NPN General Purpose Amplifier
メーカ National Semiconductor
ロゴ National Semiconductor ロゴ 




このページの下部にプレビューとPZT3904ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

PZT3904 Datasheet, PZT3904 PDF,ピン配置, 機能
N
Discrete Power & Signal
Technologies
www.DataSheet4U.com
2N3904
MMBT3904
C
BE
TO-92
MMPQ3904
EB
B
BE
E
B
E CC
C
CC
C
C
C
SOIC-16
C
SOT-23
Mark: 1A
E
B
PZT3904
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C

1 Page





PZT3904 pdf, ピン配列
NPN General Purpose Amplifier
(continued)
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3904
625
5.0
83.3
200
*PZ T3904
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
**MMBT3904
350
2.8
357
MMPQ3904
1,000
8.0
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
°C/W
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
25 °C
200
V CE = 5V
100 - 40º C
0
0.1 1
10 100
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
0.8 - 40 °C
0.6
25 °C
0.4
125 °C
0.1 1 10
I C - COLLECTOR CURRENT (mA)
P 23
100
Collector-Emitter Saturation
Voltage vs Collector Current
0.15 β = 10
0.1
125 °C
0.05
0.1
25 °C
- 40 °C
1 10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8 - 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
100


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ PZT3904 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
PZT3904

NPN switching transistor

NXP Semiconductors
NXP Semiconductors
PZT3904

SMALL SIGNAL NPN TRANSISTOR

STMicroelectronics
STMicroelectronics
PZT3904

NPN Silicon Switching Transistor

Siemens Semiconductor Group
Siemens Semiconductor Group
PZT3904

NPN General Purpose Amplifier

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap