|
|
IRF7325のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7325 |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7325ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Low Profile (<1.8mm)
q Available in Tape & Reel
VDSS
-12V
PD- 94094
IRF7325
HEXFET® Power MOSFET
RDS(on) max (mΩ)
24@VGS = -4.5V
33@VGS = -2.5V
49@VGS = -1.8V
ID
±7.8A
±6.2A
±3.9A
Description
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
G1
S2
G2
18
27
36
45
Top V ie w
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-7.8
-6.2
-39
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
2/5/01
1 Page 100
10
VGS
TOP -10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
1
-1.2V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
-VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
IRF7325
100
10
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100
10 TJ = 150° C
TJ = 25 ° C
1
0.1
1.0
V DS = -10V
20µs PULSE WIDTH
1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -7.8A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7325
0.05 0.08
0.04
0.03
ID = -7.8A
0.02
0.01
0.0
2.0 4.0 6.0 8.0
-VGS, Gate -to -Source Voltage (V)
10.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.06 VGS = -1.8V
0.04
VGS = -2.5V
0.02
0
2.0
VGS = -4.5V
4.0 6.0 8.0
-ID , Drain Current (A)
10.0
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRF7325 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF732 | N-Channel Mosfet Transistor | Inchange Semiconductor |
IRF732 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V | Fairchild Semiconductor |
IRF732 | Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC | New Jersey Semiconductor |
IRF7321D2 | FETKY MOSFET & Schottky Diode | International Rectifier |