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IRF7313PBF の電気的特性と機能

IRF7313PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7313PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7313PBF Datasheet, IRF7313PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95039
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
IRF7313PbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.029
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy ‚
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
Avalanche Current
IAR 4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
EAR
dv/dt
0.20
5.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
RθJA
Limit
62.5
Units
°C/W
10/7/04

1 Page





IRF7313PBF pdf, ピン配列
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
IRF7313PbF
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
VDS
100
TJ = 25°C
TJ = 150°C
10
TJ = 150°C
10
TJ = 25°C
VDS = 10V
1
20µs PULSE WIDTH
A
3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage


3Pages


IRF7313PBF 電子部品, 半導体
IRF7313PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
DB
A5
6
E
8765
1234
H
0.25 [.010]
A
6X e
e1
A
C
y
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
DIM
INCHES
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BASIC
e 1 .025 BASIC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
MILLIMET ERS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 BAS IC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF7313PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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