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IRF2907ZLPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2907ZLPbF
部品説明 (IRF2907ZxPbF) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2907ZLPbF Datasheet, IRF2907ZLPbF PDF,ピン配置, 機能
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PD - 95489A
AUTOMOTIVE MOSFET
IRF2907ZPbF
IRF2907ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
IRF2907ZLPbF
HEXFET® Power MOSFET
D VDSS = 75V
G RDS(on) = 4.5m‰
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S ID = 75A
TO-220AB
D2Pak
TO-262
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
Case-to-Sink, Flat, Greased Surface
kJunction-to-Ambient
jkJunction-to-Ambient (PCB Mount, steady state)
Max.
170
120
75
680
300
2.0
± 20
270
690
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
l0.50
–––
62
40
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/01/05

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