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IRF2805SPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2805SPbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2805SPbF Datasheet, IRF2805SPbF PDF,ピン配置, 機能
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PD - 95944
IRF2805SPbF
AUTOMOTIVE MOSFET
Typical Applications
l Climate Control
l ABS
l Electronic Braking
l Windshield Wipers
l Lead-Free
Features
l Advanced Process Technology
l Ultra Low On-Resistance
G
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
IRF2805LPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 4.7m
S ID = 135A†
D2Pak
TO-262
IRF2805SPbF IRF2805LPbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Valueˆ
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135†
96†
700
200
1.3
± 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient(PCB Mounted, steady state)**
–––
–––
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
Max.
0.75
40
Units
°C/W
1
11/16/04

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