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IRF1312PbFのメーカーはInternational Rectifierです、この部品の機能は「(IRF1312xPbF) HEXFET Power MOSFET」です。 |
部品番号 | IRF1312PbF |
| |
部品説明 | (IRF1312xPbF) HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF1312PbFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
www.DataSheet4U.com
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
PD- 95409A
IRF1312PbF
IRF1312SPbF
IRF1312LPbF
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
10mΩ
ID
95A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF1312
D2Pak
IRF1312S
TO-262
IRF1312L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
95
67
380
3.8
210
1.4
± 20
5.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Notes through are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
°C/W
1
12/23/04
1 Page IRF1312/S/LPbF
1000
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
1
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.01
5
VDS = 25V
20µs PULSE WIDTH
6789
VGS , Gate-to-Source Voltage (V)
10
Fig 3. Typical Transfer Characteristics
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2.5
ID = 95A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF1312/S/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
500
ID
TOP 23A
40A
400
BOTTOM
57A
300
200
100
0
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C) °
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF1312PbF | (IRF1312xPbF) HEXFET Power MOSFET | International Rectifier |