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IRF7416PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7416PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7416PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
PD - 95137
IRF7416PbF
HEXFET® Power MOSFET
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
VDSS = -30V
RDS(on) = 0.02Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ - 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Typ.
Max.
50
Units
°C/W
1
06/06/05
1 Page 100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20µs PULSE WIDTH
1A
3.0 3.5 4.0 4.5 5.0 5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
IRF7416PbF
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = -5.6A
1.5
1.0
0.5
0.0
-60
-40 -20 0
VGS = -10V
A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7416PbF
VDS
L
RG
-20V
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
1000
800
ID
TOP
-2.5A
-4.5A
BOTTOM -5.6A
600
400
200
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (oC)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ IRF7416PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7416PBF | HEXFET Power MOSFET | International Rectifier |
IRF7416PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |