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PDF IRF7343PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7343PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 92547
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings
S1
G1
S2
G2
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
IRF7343PbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
D1
D1
VDSS
D2
55V
-55V
D2
RDS(on) 0.050Ω 0.105Ω
SO-8
Max.
N-Channel
P-Channel
55 -55
4.7 -3.4
3.8 -2.7
38 -27
2.0
1.3
72 114
4.7 -3.4
0.20
± 20
5.0 -5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
1
10/7/04
1 page  
N-Channel
IRF7343PbF
1200
1000
800
600
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
400
200
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 4.5A
16
12
VDS = 48V
VDS = 30V
VDS = 12V
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7343PBF.PDF ] | |
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