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PDF US5U3 Data sheet ( Hoja de datos )
| Número de pieza | US5U3 | |
| Descripción | 2.5V Drive Nch+SBD MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de US5U3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
US5U3
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
zDimensions (Unit : mm)
TUMT5
2.0
1.3
0.65 0.65
(5) (4)
(1) (2) (3)
0.3
0.85Max.
0.77
0~0.1
0.17
Abbreviated symbol : U03
zApplications
Switching
zPackage specifications
Type
US5U3
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Channel temperature
Tch
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM ∗1
PD ∗2
Tj
Limits
30
12
±1.5
±6.0
0.6
6.0
0.7
150
Limits
25
20
0.7
3.0
0.5
150
zInner circuit
(5)
(4)
∗2
∗1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
Unit
V
V
A
A
A
A
W / ELEMENT
°C
Unit
V
V
A
A
W / ELEMENT
°C
Rev.A
1/3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet US5U3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| US5U1 | 2.5V Drive Nch+SBD MOSFET | ROHM Semiconductor |
| US5U2 | 4V Drive Nch+SBD MOSFET | ROHM Semiconductor |
| US5U29 | 2.5V Drive Pch+SBD MOS FET | ROHM Semiconductor |
| US5U3 | 2.5V Drive Nch+SBD MOSFET | ROHM Semiconductor |
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