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IRLU9343-701PBF の電気的特性と機能

IRLU9343-701PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLU9343-701PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLU9343-701PBF Datasheet, IRLU9343-701PBF PDF,ピン配置, 機能
DIGITAL AUDIO MOSFET
PD - 95386A
IRLR9343PbF
IRLU9343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU9343-701PbF
Key Parameters
VDS -55
RDS(ON) typ. @ VGS = -10V
93
RDS(ON) typ. @ VGS = -4.5V
150
Qg typ.
31
TJ max
175
V
m:
m:
nC
°C
D
G
D-Pak
IRLR9343
I-Pak
IRLU9343
I-Pak Leadform 701
S IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through ‰ are on page 10
www.irf.com
1
12/07/04

1 Page





IRLU9343-701PBF pdf, ピン配列
IRLR/U9343PbF & IRLU9343-701PbF
100
VGS
TOP
-15V
-12V
-10V
-8.0V
-5.5V
10
-4.5V
-3.0V
BOTTOM -2.5V
100
TOP
VGS
-15V
-12V
-10V
-8.0V
-5.5V
10
-4.5V
-3.0V
BOTTOM -2.5V
1
0.1
0.1
-2.5V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
10.0
TJ = 25°C
TJ = 175°C
1 -2.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = -14A
VGS = -10V
1.5
1.0
0.1
0.0
VDS = -25V
60µs PULSE WIDTH
5.0 10.0
-VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20
ID= -14A
16
12
VDS= -44V
VDS= -28V
VDS= -11V
Coss
100 Crss
10
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 19
10 20 30 40
QG Total Gate Charge (nC)
50
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRLU9343-701PBF 電子部品, 半導体
IRLR/U9343PbF & IRLU9343-701PbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

RG
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
-„ +
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
InductorInCduurcetnotr
Current
Forward Drop
Ripple 5%
* Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for P-Channel
HEXFET® Power MOSFETs
VDS
L
RG
-V20GSV
tp
D.U.T
IAS
0.01
DRIVER
VDD
A
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15V
*VGS=10V
VDD
ISD
-
+ VDD
Fig 17a. Unclamped Inductive Test Circuit
IAS
Fig 18a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
tp
V(BR)DSS
Fig 17b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Fig 19a. Gate Charge Test Circuit
6
90%
VDS
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19b Gate Charge Waveform
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部品番号部品説明メーカ
IRLU9343-701PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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