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IRLR8103VPBF の電気的特性と機能

IRLR8103VPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLR8103VPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLR8103VPBF Datasheet, IRLR8103VPBF PDF,ピン配置, 機能
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
100% RG Tested
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
TRhDSe(oInR), LgRat8e1c0h3aVrgoeffaenrds
Cdv/dt-induced turn-on immunity.
an extremely low combination of
sQysnwc&hroRnDoSu(osn)
for
FET
reduced losses
applications.
in
both
control
and
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
PD - 95093A
IRLR8103VPbF
D
D-Pak
G
S
DEVICE CHARACTERISTICS…
RDS(on)
QG
QSW
QOSS
IRLR8103V
7.9 m
27 nC
12 nC
29nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
TC = 25°C
(VGS > 10V)
™Pulsed Drain Current
TC= 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃTC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Case
www.irf.com
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Symbol
RθJA
RθJC
IRLR8103V
30
±20
91
63
363
115
60
-55 to 150
91
363
Units
V
A
W
°C
A
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
1
12/0604

1 Page





IRLR8103VPBF pdf, ピン配列
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
2.7V
10
20µs PULSE WIDTH
1 TJ = 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 150°C
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
IRLR8103VPbF
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
1 TJ= 150 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0 ID = 15A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRLR8103VPBF 電子部品, 半導体
IRLR8103VPbF
0.016
0.014
0.014
0.012
0.010
0.008
VGS = 4.5V
VGS = 10V
0.012
0.010
0.008
ID = 15A
0.006
0
50 100 150 200 250 300 350
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
0.006
0.0
2.0 4.0 6.0
VGS, Gate -to -Source Voltage (V)
8.0
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
VGS
QGS
VG
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRLR8103VPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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