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IRLR3705ZPBF の電気的特性と機能

IRLR3705ZPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLR3705ZPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLR3705ZPBF Datasheet, IRLR3705ZPBF PDF,ピン配置, 機能
PD - 95956
AUTOMOTIVE MOSFET
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
jJunction-to-Case
ijJunction-to-Ambient (PCB mount)
jJ u n c tio n -to -A m b ie n t
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRLR3705ZPbF
IRLU3705ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0m
S ID = 42A
D-Pak
IRLR3705Z
I-Pak
IRLU3705Z
Max.
89
63
42
360
130
0.88
± 16
110
190
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.14
40
110
Units
°C/W
1
12/21/04

1 Page





IRLR3705ZPBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
10
1
0.1
2.8V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRLR/U3705ZPbF
1000
100
TOP
BOTTOM
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.8V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.0
100.0
TJ = 25°C
TJ = 175°C
10.0
VDS = 15V
60µs PULSE WIDTH
1.0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
TJ = 25°C
80
60
TJ = 175°C
40
20
0
0
VDS = 8.0V
380µs PULSE WIDTH
10 20 30 40 50 60 70
ID, Drain-to-Source Current (A)
80
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRLR3705ZPBF 電子部品, 半導体
IRLR/U3705ZPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
500
ID
TOP 5.3A
400 7.0A
BOTTOM 42A
300
200
100
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
2.5
ID = 250µA
2.0
ID = 150µA
ID = 50µA
1.5
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

6 Page



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部品番号部品説明メーカ
IRLR3705ZPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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