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IRLR2908 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR2908
部品説明 POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR2908 Datasheet, IRLR2908 PDF,ピン配置, 機能
PD - 94501
Features
AUTOMOTIVE MOSFET
IRLR2908
IRLU2908
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 80V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
RDS(on) = 28m
l Repetitive Avalanche Allowed up to Tjmax
ID = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
D-Pak
IRLR2908
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
™Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Max.
39
28
30
150
120
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
™Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
Soldering Temperature, for 10 seconds
Thermal Resistance
300 (1.6mm from case )
Parameter
Typ.
Max.
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
––– 1.3
––– 40
––– 110
www.irf.com
I-Pak
IRLU2908
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
02/13/03

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